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1 Ergebnisse
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Abnormal threshold voltage shift by the effect of H2O durin..:
Ha, Tae-Kyoung
;
Kim, Yongjo
;
Yu, SangHee
...
Solid-State Electronics. 174 (2020) - p. 107916 , 2020
Link:
https://doi.org/10.1016/j.sse.2020.107916
RT Journal T1
Abnormal threshold voltage shift by the effect of H2O during negative bias stress in amorphous InGaZnO thin film transistors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2020.107916&Exemplar=1&LAN=DE A1 Ha, Tae-Kyoung A1 Kim, Yongjo A1 Yu, SangHee A1 Kim, GwangTae A1 Jeong, Hoon A1 Park, JeongKi A1 Kim, Ohyun PB Elsevier BV YR 2020 SN 0038-1101 JF Solid-State Electronics VO 174 SP 107916 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2020.107916 DO https://doi.org/10.1016/j.sse.2020.107916 SF ELIB - SuUB Bremen
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