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1 Ergebnisse
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Improving the barrier inhomogeneity of 4H-SiC Schottky diod..:
Shi, Ding-kun
;
Wang, Ying
;
Wu, Xue
...
Solid-State Electronics. 180 (2021) - p. 107992 , 2021
Link:
https://doi.org/10.1016/j.sse.2021.107992
RT Journal T1
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2021.107992&Exemplar=1&LAN=DE A1 Shi, Ding-kun A1 Wang, Ying A1 Wu, Xue A1 Yang, Zhao-yang A1 Li, Xing-ji A1 Yang, Jian-qun A1 Cao, Fei PB Elsevier BV YR 2021 SN 0038-1101 JF Solid-State Electronics VO 180 SP 107992 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2021.107992 DO https://doi.org/10.1016/j.sse.2021.107992 SF ELIB - SuUB Bremen
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