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Nitrogen rich PECVD silicon nitride for passivation of Si a..:
Subhani, Khawaja Nizammuddin
;
Remesh, Nayana
;
S, Niranjan
...
Solid-State Electronics. 186 (2021) - p. 108188 , 2021
Link:
https://doi.org/10.1016/j.sse.2021.108188
RT Journal T1
Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2021.108188&Exemplar=1&LAN=DE A1 Subhani, Khawaja Nizammuddin A1 Remesh, Nayana A1 S, Niranjan A1 Raghavan, Srinivasan A1 R, Muralidharan A1 Nath, Digbijoy N. A1 Bhat, K.N. PB Elsevier BV YR 2021 SN 0038-1101 JF Solid-State Electronics VO 186 SP 108188 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2021.108188 DO https://doi.org/10.1016/j.sse.2021.108188 SF ELIB - SuUB Bremen
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