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1 Ergebnisse
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Characterization of fully silicided source/drain SOI UTBB n..:
Han, Yi
;
Xi, Fengben
;
Allibert, Frederic
...
Solid-State Electronics. 192 (2022) - p. 108263 , 2022
Link:
https://doi.org/10.1016/j.sse.2022.108263
RT Journal T1
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2022.108263&Exemplar=1&LAN=DE A1 Han, Yi A1 Xi, Fengben A1 Allibert, Frederic A1 Radu, Ionut A1 Prucnal, Slawomir A1 Bae, Jin-Hee A1 Hoffmann-Eifert, Susanne A1 Knoch, Joachim A1 Grützmacher, Detlev A1 Zhao, Qing-Tai PB Elsevier BV YR 2022 SN 0038-1101 JF Solid-State Electronics VO 192 SP 108263 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2022.108263 DO https://doi.org/10.1016/j.sse.2022.108263 SF ELIB - SuUB Bremen
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