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Experimental assessment of gate-induced drain leakage in SO..:
de Souza, Michelly
;
Cerdeira, Antonio
;
Estrada, Magali
...
Solid-State Electronics. 208 (2023) - p. 108716 , 2023
Link:
https://doi.org/10.1016/j.sse.2023.108716
RT Journal T1
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2023.108716&Exemplar=1&LAN=DE A1 de Souza, Michelly A1 Cerdeira, Antonio A1 Estrada, Magali A1 Cassé, Mikaël A1 Barraud, Sylvain A1 Vinet, Maud A1 Faynot, Olivier A1 Pavanello, Marcelo A. PB Elsevier BV YR 2023 SN 0038-1101 JF Solid-State Electronics VO 208 SP 108716 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2023.108716 DO https://doi.org/10.1016/j.sse.2023.108716 SF ELIB - SuUB Bremen
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