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1 Ergebnisse
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Low-frequency noise characterization of positive bias stres..:
Bae, Hagyoul
;
Lee, Geon Bum
;
Yoo, Jaewook
...
Solid-State Electronics. 215 (2024) - p. 108882 , 2024
Link:
https://doi.org/10.1016/j.sse.2024.108882
RT Journal T1
Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2024.108882&Exemplar=1&LAN=DE A1 Bae, Hagyoul A1 Lee, Geon Bum A1 Yoo, Jaewook A1 Lee, Khwang-Sun A1 Ku, Ja-Yun A1 Kim, Kihyun A1 Kim, Jungsik A1 Ye, Peide D. A1 Park, Jun-Young A1 Choi, Yang-Kyu PB Elsevier BV YR 2024 SN 0038-1101 JF Solid-State Electronics VO 215 SP 108882 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2024.108882 DO https://doi.org/10.1016/j.sse.2024.108882 SF ELIB - SuUB Bremen
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