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1 Ergebnisse
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Unveiling the mechanism behind the negative capacitance eff..:
Singh, Khoirom Johnson
;
Acharya, Lomash Chandra
;
Bulusu, Anand
.
Solid-State Electronics. 216 (2024) - p. 108932 , 2024
Link:
https://doi.org/10.1016/j.sse.2024.108932
RT Journal T1
Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2024.108932&Exemplar=1&LAN=DE A1 Singh, Khoirom Johnson A1 Acharya, Lomash Chandra A1 Bulusu, Anand A1 Dasgupta, Sudeb PB Elsevier BV YR 2024 SN 0038-1101 JF Solid-State Electronics VO 216 SP 108932 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2024.108932 DO https://doi.org/10.1016/j.sse.2024.108932 SF ELIB - SuUB Bremen
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