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1 Ergebnisse
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A novel method to determine bias-dependent source and drain..:
Jiang, Guangyuan
;
Fu, Chen
;
Liu, Yang
...
Solid-State Electronics. 220 (2024) - p. 108991 , 2024
Link:
https://doi.org/10.1016/j.sse.2024.108991
RT Journal T1
A novel method to determine bias-dependent source and drain parasitic series resistances in AlGaN/GaN high electron mobility transistors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.sse.2024.108991&Exemplar=1&LAN=DE A1 Jiang, Guangyuan A1 Fu, Chen A1 Liu, Yang A1 Yang, Guang A1 Cui, Peng A1 Zhang, Guangyuan A1 Lv, Yuanjie A1 Lin, Zhaojun PB Elsevier BV YR 2024 SN 0038-1101 JF Solid-State Electronics VO 220 SP 108991 LK http://dx.doi.org/https://doi.org/10.1016/j.sse.2024.108991 DO https://doi.org/10.1016/j.sse.2024.108991 SF ELIB - SuUB Bremen
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