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1 Ergebnisse
1
Strained-Si nMOSFET formed on very thin SiGe buffer layer f..:
Sawano, K.
;
Fukumoto, A.
;
Hoshi, Y.
..
Thin Solid Films. 517 (2008) 1 - p. 353-355 , 2008
Link:
https://doi.org/10.1016/j.tsf.2008.08.108
RT Journal T1
Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.tsf.2008.08.108&Exemplar=1&LAN=DE A1 Sawano, K. A1 Fukumoto, A. A1 Hoshi, Y. A1 Nakagawa, K. A1 Shiraki, Y. PB Elsevier BV YR 2008 SN 0040-6090 JF Thin Solid Films VO 517 IS 1 SP 353 OP 355 LK http://dx.doi.org/https://doi.org/10.1016/j.tsf.2008.08.108 DO https://doi.org/10.1016/j.tsf.2008.08.108 SF ELIB - SuUB Bremen
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