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Study of resistive random access memory based on TiN/TaOx/T..:
Diokh, Therese
;
Le-Roux, Elise
;
Jeannot, Simon
...
Thin Solid Films. 533 (2013) - p. 24-28 , 2013
Link:
https://doi.org/10.1016/j.tsf.2012.11.124
RT Journal T1
Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.tsf.2012.11.124&Exemplar=1&LAN=DE A1 Diokh, Therese A1 Le-Roux, Elise A1 Jeannot, Simon A1 Cagli, Carlo A1 Jousseaume, Vincent A1 Nodin, Jean-François A1 Gros-Jean, Mickaël A1 Gaumer, Clement A1 Mellier, Maxime A1 Cluzel, Jacques A1 Carabasse, Catherine A1 Candelier, Philippe A1 De Salvo, Barbara PB Elsevier BV YR 2013 SN 0040-6090 JF Thin Solid Films VO 533 SP 24 OP 28 LK http://dx.doi.org/https://doi.org/10.1016/j.tsf.2012.11.124 DO https://doi.org/10.1016/j.tsf.2012.11.124 SF ELIB - SuUB Bremen
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