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1 Ergebnisse
1
Ge1−xSix on Ge-based n-type metal–oxide semiconductor field..:
Lee, Chang-Chun
;
Hsieh, Chia-Ping
;
Huang, Pei-Chen
..
Thin Solid Films. 602 (2016) - p. 78-83 , 2016
Link:
https://doi.org/10.1016/j.tsf.2015.08.051
RT Journal T1
Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.tsf.2015.08.051&Exemplar=1&LAN=DE A1 Lee, Chang-Chun A1 Hsieh, Chia-Ping A1 Huang, Pei-Chen A1 Cheng, Sen-Wen A1 Liao, Ming-Han PB Elsevier BV YR 2016 SN 0040-6090 JF Thin Solid Films VO 602 SP 78 OP 83 LK http://dx.doi.org/https://doi.org/10.1016/j.tsf.2015.08.051 DO https://doi.org/10.1016/j.tsf.2015.08.051 SF ELIB - SuUB Bremen
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