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1 Ergebnisse
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Gate leakage current reduction and improved reliability wit..:
Park, Jungmin
;
Choi, Pyungho
;
Kim, Soonkon
...
Thin Solid Films. 708 (2020) - p. 138102 , 2020
Link:
https://doi.org/10.1016/j.tsf.2020.138102
RT Journal T1
Gate leakage current reduction and improved reliability with an ultra-thin Ti layer for low-power applications
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.tsf.2020.138102&Exemplar=1&LAN=DE A1 Park, Jungmin A1 Choi, Pyungho A1 Kim, Soonkon A1 Kang, Heesung A1 Ku, Jahum A1 Choi, Byoungdeog PB Elsevier BV YR 2020 SN 0040-6090 JF Thin Solid Films VO 708 SP 138102 LK http://dx.doi.org/https://doi.org/10.1016/j.tsf.2020.138102 DO https://doi.org/10.1016/j.tsf.2020.138102 SF ELIB - SuUB Bremen
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