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1 Ergebnisse
1
Ni/GeOx/p+ Si resistive-switching random-access memory with..:
Lee, Jae Yoon
;
Kim, Youngmin
;
Kim, Min-Hwi
...
Vacuum. 161 (2019) - p. 63-70 , 2019
Link:
https://doi.org/10.1016/j.vacuum.2018.12.020
RT Journal T1
Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.vacuum.2018.12.020&Exemplar=1&LAN=DE A1 Lee, Jae Yoon A1 Kim, Youngmin A1 Kim, Min-Hwi A1 Go, Seoyeon A1 Ryu, Seung Wook A1 Lee, Jae Yeon A1 Ha, Tae Jung A1 Kim, Soo Gil A1 Cho, Seongjae A1 Park, Byung-Gook PB Elsevier BV YR 2019 SN 0042-207X JF Vacuum VO 161 SP 63 OP 70 LK http://dx.doi.org/https://doi.org/10.1016/j.vacuum.2018.12.020 DO https://doi.org/10.1016/j.vacuum.2018.12.020 SF ELIB - SuUB Bremen
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