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1 Ergebnisse
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The improved properties of solution-based InGaSnO (IGTO) th..:
Zhang, Shuo
;
Weng, Le
;
Liu, Bin
...
Vacuum. 215 (2023) - p. 112225 , 2023
Link:
https://doi.org/10.1016/j.vacuum.2023.112225
RT Journal T1
The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_j.vacuum.2023.112225&Exemplar=1&LAN=DE A1 Zhang, Shuo A1 Weng, Le A1 Liu, Bin A1 Kuang, Dan A1 Liu, Xianwen A1 Jiang, Baiqi A1 Zhang, Guangchen A1 Bao, Zongchi A1 Yuan, Guangcai A1 Guo, Jian A1 Ning, Ce A1 Shi, Dawei A1 Yu, Zhinong PB Elsevier BV YR 2023 SN 0042-207X JF Vacuum VO 215 SP 112225 LK http://dx.doi.org/https://doi.org/10.1016/j.vacuum.2023.112225 DO https://doi.org/10.1016/j.vacuum.2023.112225 SF ELIB - SuUB Bremen
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