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1 Ergebnisse
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High-quality GaN epilayer grown by newly designed horizonta..:
Lee, Cheul-Ro
;
Son, Sung-Jin
;
Lee, In-Hwan
..
Journal of Crystal Growth. 182 (1997) 1-2 - p. 11-16 , 1997
Link:
https://doi.org/10.1016/s0022-0248(97)00316-3
RT Journal T1
High-quality GaN epilayer grown by newly designed horizontal counter-flow MOCVD reactor
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_s0022-0248(97)00316-3&Exemplar=1&LAN=DE A1 Lee, Cheul-Ro A1 Son, Sung-Jin A1 Lee, In-Hwan A1 Leem, Jae-Young A1 Noh, Sam Kyu PB Elsevier BV YR 1997 SN 0022-0248 JF Journal of Crystal Growth VO 182 IS 1-2 SP 11 OP 16 LK http://dx.doi.org/https://doi.org/10.1016/s0022-0248(97)00316-3 DO https://doi.org/10.1016/s0022-0248(97)00316-3 SF ELIB - SuUB Bremen
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