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1 Ergebnisse
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GaN layer growth optimization for high power devices:
Hass Bar-Ilan, A.
;
Zamir, S.
;
Katz, O.
..
Materials Science and Engineering: A. 302 (2001) 1 - p. 14-17 , 2001
Link:
https://doi.org/10.1016/s0921-5093(00)01347-2
RT Journal T1 <Title>GaN layer growth optimization for high power devices</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_s0921-5093(00)01347-2&Exemplar=1&LAN=DE A1 Hass Bar-Ilan, A. A1 Zamir, S. A1 Katz, O. A1 Meyler, B. A1 Salzman, J. PB Elsevier BV YR 2001 SN 0921-5093 JF Materials Science and Engineering: A VO 302 IS 1 SP 14 OP 17 LK http://dx.doi.org/https://doi.org/10.1016/s0921-5093(00)01347-2 DO https://doi.org/10.1016/s0921-5093(00)01347-2 SF ELIB - SuUB Bremen
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