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Delamination of Si by high dose H-ion implantation through ..:
Sasaki, Shiho
;
Izumi, Tomio
;
Hara, Tohru
Materials Science and Engineering: B. 91-92 (2002) - p. 160-163 , 2002
Link:
https://doi.org/10.1016/s0921-5107(01)00984-9
RT Journal T1
Delamination of Si by high dose H-ion implantation through thin SiO2 film (ESR characterization)
UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_s0921-5107(01)00984-9&Exemplar=1&LAN=DE A1 Sasaki, Shiho A1 Izumi, Tomio A1 Hara, Tohru PB Elsevier BV YR 2002 SN 0921-5107 JF Materials Science and Engineering: B VO 91-92 SP 160 OP 163 LK http://dx.doi.org/https://doi.org/10.1016/s0921-5107(01)00984-9 DO https://doi.org/10.1016/s0921-5107(01)00984-9 SF ELIB - SuUB Bremen
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