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Investigation of the M/a-Si:H/c-Si structure as a Schottky ..:
Georgiev, S.S
;
Toneva, A
;
Sueva, D
Solar Energy Materials and Solar Cells. 58 (1999) 4 - p. 387-397 , 1999
Link:
https://doi.org/10.1016/s0927-0248(99)00013-6
RT Journal T1 <Title>Investigation of the M/a-Si:H/c-Si structure as a Schottky contact with a diffusion barrier layer</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_s0927-0248(99)00013-6&Exemplar=1&LAN=DE A1 Georgiev, S.S A1 Toneva, A A1 Sueva, D PB Elsevier BV YR 1999 SN 0927-0248 JF Solar Energy Materials and Solar Cells VO 58 IS 4 SP 387 OP 397 LK http://dx.doi.org/https://doi.org/10.1016/s0927-0248(99)00013-6 DO https://doi.org/10.1016/s0927-0248(99)00013-6 SF ELIB - SuUB Bremen
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