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1 Ergebnisse
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Dislocation of Cz-sapphire substrate for GaN growth by chem..:
NIU, Xin-huan
;
LU, Guo-qi
;
ZHANG, Wei-lian
..
Transactions of Nonferrous Metals Society of China. 16 (2006) - p. s187-s190 , 2006
Link:
https://doi.org/10.1016/s1003-6326(06)60172-6
RT Journal T1 <Title>Dislocation of Cz-sapphire substrate for GaN growth by chemical etching method</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_s1003-6326(06)60172-6&Exemplar=1&LAN=DE A1 NIU, Xin-huan A1 LU, Guo-qi A1 ZHANG, Wei-lian A1 GAO, Jin-yong A1 LIU, Yu-ling PB Elsevier BV YR 2006 SN 1003-6326 JF Transactions of Nonferrous Metals Society of China VO 16 SP s187 OP s190 LK http://dx.doi.org/https://doi.org/10.1016/s1003-6326(06)60172-6 DO https://doi.org/10.1016/s1003-6326(06)60172-6 SF ELIB - SuUB Bremen
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