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The thermopower of a high-mobility Si-MOSFET around the met..:
Fletcher, R
;
Pudalov, V.M
;
Tsaousidou, M
.
Physica E: Low-dimensional Systems and Nanostructures. 6 (2000) 1-4 - p. 272-275 , 2000
Link:
https://doi.org/10.1016/s1386-9477(99)00144-7
RT Journal T1 <Title>The thermopower of a high-mobility Si-MOSFET around the metal-insulator transition</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_s1386-9477(99)00144-7&Exemplar=1&LAN=DE A1 Fletcher, R A1 Pudalov, V.M A1 Tsaousidou, M A1 Butcher, P.N PB Elsevier BV YR 2000 SN 1386-9477 JF Physica E: Low-dimensional Systems and Nanostructures VO 6 IS 1-4 SP 272 OP 275 LK http://dx.doi.org/https://doi.org/10.1016/s1386-9477(99)00144-7 DO https://doi.org/10.1016/s1386-9477(99)00144-7 SF ELIB - SuUB Bremen
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