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Indium Doping Concentration Effects in the Fabrication of Z..:
You, Hsin-Chiang
International Journal of Electrochemical Science. 8 (2013) 7 - p. 9773-9784 , 2013
Link:
https://doi.org/10.1016/s1452-3981(23)13011-2
RT Journal T1 <Title>Indium Doping Concentration Effects in the Fabrication of Zinc-Oxide Thin-Film Transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_s1452-3981(23)13011-2&Exemplar=1&LAN=DE A1 You, Hsin-Chiang PB Elsevier BV YR 2013 SN 1452-3981 JF International Journal of Electrochemical Science VO 8 IS 7 SP 9773 OP 9784 LK http://dx.doi.org/https://doi.org/10.1016/s1452-3981(23)13011-2 DO https://doi.org/10.1016/s1452-3981(23)13011-2 SF ELIB - SuUB Bremen
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