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Effects of Doped Stannum in the Fabrication of Zinc-Oxide T..:
You, Hsin-Chiang
;
Wu, Cheng-Yen
;
Yang, Wen-Luh
International Journal of Electrochemical Science. 11 (2016) 5 - p. 3383-3392 , 2016
Link:
https://doi.org/10.1016/s1452-3981(23)17407-4
RT Journal T1 <Title>Effects of Doped Stannum in the Fabrication of Zinc-Oxide Thin-Film Transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1016_s1452-3981(23)17407-4&Exemplar=1&LAN=DE A1 You, Hsin-Chiang A1 Wu, Cheng-Yen A1 Yang, Wen-Luh PB Elsevier BV YR 2016 SN 1452-3981 JF International Journal of Electrochemical Science VO 11 IS 5 SP 3383 OP 3392 LK http://dx.doi.org/https://doi.org/10.1016/s1452-3981(23)17407-4 DO https://doi.org/10.1016/s1452-3981(23)17407-4 SF ELIB - SuUB Bremen
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