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Electrical performances of AlInN/GaN HEMTs. A comparison wi..:
Jardel, Olivier
;
Callet, Guillaume
;
Dufraisse, Jérémy
...
International Journal of Microwave and Wireless Technologies. 3 (2011) 3 - p. 301-309 , 2011
Link:
https://doi.org/10.1017/s1759078711000419
RT Journal T1 <Title>Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1017_s1759078711000419&Exemplar=1&LAN=DE A1 Jardel, Olivier A1 Callet, Guillaume A1 Dufraisse, Jérémy A1 Piazza, Michele A1 Sarazin, Nicolas A1 Chartier, Eric A1 Oualli, Mourad A1 Aubry, Raphaël A1 Reveyrand, Tibault A1 Jacquet, Jean-Claude A1 Di Forte Poisson, Marie-Antoinette A1 Morvan, Erwan A1 Piotrowicz, Stéphane A1 Delage, Sylvain L. PB Cambridge University Press (CUP) YR 2011 SN 1759-0787 SN 1759-0795 JF International Journal of Microwave and Wireless Technologies VO 3 IS 3 SP 301 OP 309 LK http://dx.doi.org/https://doi.org/10.1017/s1759078711000419 DO https://doi.org/10.1017/s1759078711000419 SF ELIB - SuUB Bremen
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