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1 Ergebnisse
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Interface formation mechanism of GaN on Al-pretreated ScAlM..:
Fukui, Takato
;
Matsuda, Yoshinobu
;
Matsukura, Makoto
...
Crystal Growth & Design. 23 (2023) 4 - p. 2739-2744 , 2023
Link:
https://doi.org/10.1021/acs.cgd.2c01525
RT Journal T1
Interface formation mechanism of GaN on Al-pretreated ScAlMgO4 (0001) substrates
UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acs.cgd.2c01525&Exemplar=1&LAN=DE A1 Fukui, Takato A1 Matsuda, Yoshinobu A1 Matsukura, Makoto A1 Kojima, Takahiro A1 Funato, Mitsuru A1 Kawakami, Yoichi PB American Chemical Society (ACS) YR 2023 SN 1528-7483 SN 1528-7505 JF Crystal Growth & Design VO 23 IS 4 SP 2739 OP 2744 LK http://dx.doi.org/https://doi.org/10.1021/acs.cgd.2c01525 DO https://doi.org/10.1021/acs.cgd.2c01525 SF ELIB - SuUB Bremen
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