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Growth of Tetragonal Si via Plasma-Enhanced Epitaxy:
Chen, Wanghua
;
Hamon, Gwenaëlle
;
Léal, Ronan
...
Crystal Growth & Design. 17 (2017) 8 - p. 4265-4269 , 2017
Link:
https://doi.org/10.1021/acs.cgd.7b00601
RT Journal T1
Growth of Tetragonal Si via Plasma-Enhanced Epitaxy
UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acs.cgd.7b00601&Exemplar=1&LAN=DE A1 Chen, Wanghua A1 Hamon, Gwenaëlle A1 Léal, Ronan A1 Maurice, Jean-Luc A1 Largeau, Ludovic A1 Roca i Cabarrocas, Pere PB American Chemical Society (ACS) YR 2017 SN 1528-7483 SN 1528-7505 JF Crystal Growth & Design VO 17 IS 8 SP 4265 OP 4269 LK http://dx.doi.org/https://doi.org/10.1021/acs.cgd.7b00601 DO https://doi.org/10.1021/acs.cgd.7b00601 SF ELIB - SuUB Bremen
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