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1 Ergebnisse
1
Effect of Dopant Activation and Plasmon Damping on Carrier ..:
Yin, Penghui
;
Tan, Yi
;
Ward, Matthew J.
..
The Journal of Physical Chemistry C. 123 (2019) 49 - p. 29829-29837 , 2019
Link:
https://doi.org/10.1021/acs.jpcc.9b07633
RT Journal T1
Effect of Dopant Activation and Plasmon Damping on Carrier Polarization in In2O3 Nanocrystals
UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acs.jpcc.9b07633&Exemplar=1&LAN=DE A1 Yin, Penghui A1 Tan, Yi A1 Ward, Matthew J. A1 Hegde, Manu A1 Radovanovic, Pavle V. PB American Chemical Society (ACS) YR 2019 SN 1932-7447 SN 1932-7455 JF The Journal of Physical Chemistry C VO 123 IS 49 SP 29829 OP 29837 LK http://dx.doi.org/https://doi.org/10.1021/acs.jpcc.9b07633 DO https://doi.org/10.1021/acs.jpcc.9b07633 SF ELIB - SuUB Bremen
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