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1 Ergebnisse
1
Hafnia-Based Ferroelectric Memory: Device Physics Strongly ..:
Choi, Hyojun
;
Cho, Yong Hyeon
;
Kim, Se Hyun
..
The Journal of Physical Chemistry Letters. 15 (2024) 4 - p. 983-997 , 2024
Link:
https://doi.org/10.1021/acs.jpclett.3c03363
RT Journal T1 <Title>Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acs.jpclett.3c03363&Exemplar=1&LAN=DE A1 Choi, Hyojun A1 Cho, Yong Hyeon A1 Kim, Se Hyun A1 Yang, Kun A1 Park, Min Hyuk PB American Chemical Society (ACS) YR 2024 SN 1948-7185 SN 1948-7185 JF The Journal of Physical Chemistry Letters VO 15 IS 4 SP 983 OP 997 LK http://dx.doi.org/https://doi.org/10.1021/acs.jpclett.3c03363 DO https://doi.org/10.1021/acs.jpclett.3c03363 SF ELIB - SuUB Bremen
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