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1 Ergebnisse
1
One Transistor–Two Memristor Based on Amorphous Indium–Gall..:
Jang, Jun Tae
;
Kim, Donguk
;
Choi, Woo Sik
...
ACS Applied Electronic Materials. 2 (2020) 9 - p. 2837-2844 , 2020
Link:
https://doi.org/10.1021/acsaelm.0c00499
RT Journal T1
One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices
UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acsaelm.0c00499&Exemplar=1&LAN=DE A1 Jang, Jun Tae A1 Kim, Donguk A1 Choi, Woo Sik A1 Choi, Sung-Jin A1 Kim, Dong Myong A1 Kim, Yoon A1 Kim, Dae Hwan PB American Chemical Society (ACS) YR 2020 SN 2637-6113 SN 2637-6113 JF ACS Applied Electronic Materials VO 2 IS 9 SP 2837 OP 2844 LK http://dx.doi.org/https://doi.org/10.1021/acsaelm.0c00499 DO https://doi.org/10.1021/acsaelm.0c00499 SF ELIB - SuUB Bremen
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