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High-Performance Indium Gallium Tin Oxide Transistors with ..:
Choi, Cheol Hee
;
Kim, Taikyu
;
Ueda, Shigenori
...
ACS Applied Materials & Interfaces. 13 (2021) 24 - p. 28451-28461 , 2021
Link:
https://doi.org/10.1021/acsami.1c04210
RT Journal T1 <Title>High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acsami.1c04210&Exemplar=1&LAN=DE A1 Choi, Cheol Hee A1 Kim, Taikyu A1 Ueda, Shigenori A1 Shiah, Yu-Shien A1 Hosono, Hideo A1 Kim, Junghwan A1 Jeong, Jae Kyeong PB American Chemical Society (ACS) YR 2021 SN 1944-8244 SN 1944-8252 JF ACS Applied Materials & Interfaces VO 13 IS 24 SP 28451 OP 28461 LK http://dx.doi.org/https://doi.org/10.1021/acsami.1c04210 DO https://doi.org/10.1021/acsami.1c04210 SF ELIB - SuUB Bremen
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