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1 Ergebnisse
1
Etched-And-Regrown GaN P–N Diodes with Low-Defect Interface..:
Li, Bingjun
;
Wang, Sizhen
;
Nami, Mohsen
..
ACS Applied Materials & Interfaces. 13 (2021) 44 - p. 53220-53226 , 2021
Link:
https://doi.org/10.1021/acsami.1c16221
RT Journal T1 <Title>Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acsami.1c16221&Exemplar=1&LAN=DE A1 Li, Bingjun A1 Wang, Sizhen A1 Nami, Mohsen A1 Armstrong, Andrew M. A1 Han, Jung PB American Chemical Society (ACS) YR 2021 SN 1944-8244 SN 1944-8252 JF ACS Applied Materials & Interfaces VO 13 IS 44 SP 53220 OP 53226 LK http://dx.doi.org/https://doi.org/10.1021/acsami.1c16221 DO https://doi.org/10.1021/acsami.1c16221 SF ELIB - SuUB Bremen
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