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1 Ergebnisse
1
Eliminating Ferroelectric Hysteresis in All-Two-Dimensional..:
Quan, Hui
;
Meng, Dehuan
;
Ma, Xuezhou
.
ACS Applied Materials & Interfaces. 15 (2023) 38 - p. 45076-45082 , 2023
Link:
https://doi.org/10.1021/acsami.3c06161
RT Journal T1 <Title>Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acsami.3c06161&Exemplar=1&LAN=DE A1 Quan, Hui A1 Meng, Dehuan A1 Ma, Xuezhou A1 Qiu, Chenguang PB American Chemical Society (ACS) YR 2023 SN 1944-8244 SN 1944-8252 JF ACS Applied Materials & Interfaces VO 15 IS 38 SP 45076 OP 45082 LK http://dx.doi.org/https://doi.org/10.1021/acsami.3c06161 DO https://doi.org/10.1021/acsami.3c06161 SF ELIB - SuUB Bremen
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