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Control of the Metal–Insulator Transition in VO2 Epitaxial ..:
Chen, F.H.
;
Fan, L. L.
;
Chen, S.
...
ACS Applied Materials & Interfaces. 7 (2015) 12 - p. 6875-6881 , 2015
Link:
https://doi.org/10.1021/acsami.5b00540
RT Journal T1 <Title>Control of the Metal–Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acsami.5b00540&Exemplar=1&LAN=DE A1 Chen, F.H. A1 Fan, L. L. A1 Chen, S. A1 Liao, G. M. A1 Chen, Y. L. A1 Wu, P. A1 Song, Li A1 Zou, C. W. A1 Wu, Z. Y. PB American Chemical Society (ACS) YR 2015 SN 1944-8244 SN 1944-8252 JF ACS Applied Materials & Interfaces VO 7 IS 12 SP 6875 OP 6881 LK http://dx.doi.org/https://doi.org/10.1021/acsami.5b00540 DO https://doi.org/10.1021/acsami.5b00540 SF ELIB - SuUB Bremen
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