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1 Ergebnisse
1
Monolayered Silicon and Germanium Monopnictide Semiconducto..:
Cheng, Ai-Qiang
;
He, Zi
;
Zhao, Jun
..
ACS Applied Materials & Interfaces. 10 (2018) 6 - p. 5133-5139 , 2018
Link:
https://doi.org/10.1021/acsami.7b17560
RT Journal T1 <Title>Monolayered Silicon and Germanium Monopnictide Semiconductors: Excellent Stability, High Absorbance, and Strain Engineering of Electronic Properties</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acsami.7b17560&Exemplar=1&LAN=DE A1 Cheng, Ai-Qiang A1 He, Zi A1 Zhao, Jun A1 Zeng, Hui A1 Chen, Ru-Shan PB American Chemical Society (ACS) YR 2018 SN 1944-8244 SN 1944-8252 JF ACS Applied Materials & Interfaces VO 10 IS 6 SP 5133 OP 5139 LK http://dx.doi.org/https://doi.org/10.1021/acsami.7b17560 DO https://doi.org/10.1021/acsami.7b17560 SF ELIB - SuUB Bremen
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