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1 Ergebnisse
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Effect of Growth Temperature during the Atomic Layer Deposi..:
Kim, Sang Hyeon
;
Lee, Woongkyu
;
An, Cheol Hyun
...
ACS Applied Materials & Interfaces. 10 (2018) 48 - p. 41544-41551 , 2018
Link:
https://doi.org/10.1021/acsami.8b17366
RT Journal T1 <Title>Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acsami.8b17366&Exemplar=1&LAN=DE A1 Kim, Sang Hyeon A1 Lee, Woongkyu A1 An, Cheol Hyun A1 Kwon, Dae Seon A1 Kim, Dong-Gun A1 Cha, Soon Hyung A1 Cho, Seong Tak A1 Hwang, Cheol Seong PB American Chemical Society (ACS) YR 2018 SN 1944-8244 SN 1944-8252 JF ACS Applied Materials & Interfaces VO 10 IS 48 SP 41544 OP 41551 LK http://dx.doi.org/https://doi.org/10.1021/acsami.8b17366 DO https://doi.org/10.1021/acsami.8b17366 SF ELIB - SuUB Bremen
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