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1 Ergebnisse
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Charge Transition of Oxygen Vacancies during Resistive Swit..:
Lee, Jihang
;
Schell, William
;
Zhu, Xiaojian
..
ACS Applied Materials & Interfaces. 11 (2019) 12 - p. 11579-11586 , 2019
Link:
https://doi.org/10.1021/acsami.8b18386
RT Journal T1 <Title>Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_acsami.8b18386&Exemplar=1&LAN=DE A1 Lee, Jihang A1 Schell, William A1 Zhu, Xiaojian A1 Kioupakis, Emmanouil A1 Lu, Wei D. PB American Chemical Society (ACS) YR 2019 SN 1944-8244 SN 1944-8252 JF ACS Applied Materials & Interfaces VO 11 IS 12 SP 11579 OP 11586 LK http://dx.doi.org/https://doi.org/10.1021/acsami.8b18386 DO https://doi.org/10.1021/acsami.8b18386 SF ELIB - SuUB Bremen
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