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1 Ergebnisse
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Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-F..:
Yoon, Seokhyun
;
Tak, Young Jun
;
Yoon, Doo Hyun
...
ACS Applied Materials & Interfaces. 6 (2014) 16 - p. 13496-13501 , 2014
Link:
https://doi.org/10.1021/am502571w
RT Journal T1 <Title>Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_am502571w&Exemplar=1&LAN=DE A1 Yoon, Seokhyun A1 Tak, Young Jun A1 Yoon, Doo Hyun A1 Choi, Uy Hyun A1 Park, Jin-Seong A1 Ahn, Byung Du A1 Kim, Hyun Jae PB American Chemical Society (ACS) YR 2014 SN 1944-8244 SN 1944-8252 JF ACS Applied Materials & Interfaces VO 6 IS 16 SP 13496 OP 13501 LK http://dx.doi.org/https://doi.org/10.1021/am502571w DO https://doi.org/10.1021/am502571w SF ELIB - SuUB Bremen
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