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Composition of Wide Bandgap Semiconductor Materials and Nan..:
Mancini, Lorenzo
;
Amirifar, Nooshin
;
Shinde, Deodatta
...
The Journal of Physical Chemistry C. 118 (2014) 41 - p. 24136-24151 , 2014
Link:
https://doi.org/10.1021/jp5071264
RT Journal T1
Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field
UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_jp5071264&Exemplar=1&LAN=DE A1 Mancini, Lorenzo A1 Amirifar, Nooshin A1 Shinde, Deodatta A1 Blum, Ivan A1 Gilbert, Matthieu A1 Vella, Angela A1 Vurpillot, François A1 Lefebvre, Williams A1 Lardé, Rodrigue A1 Talbot, Etienne A1 Pareige, Philippe A1 Portier, Xavier A1 Ziani, Ahmed A1 Davesnne, Christian A1 Durand, Christophe A1 Eymery, Joël A1 Butté, Raphaël A1 Carlin, Jean-François A1 Grandjean, Nicolas A1 Rigutti, Lorenzo PB American Chemical Society (ACS) YR 2014 SN 1932-7447 SN 1932-7455 JF The Journal of Physical Chemistry C VO 118 IS 41 SP 24136 OP 24151 LK http://dx.doi.org/https://doi.org/10.1021/jp5071264 DO https://doi.org/10.1021/jp5071264 SF ELIB - SuUB Bremen
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