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1 Ergebnisse
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Anodic Etching of n-GaN Epilayer into Porous GaN and Its Ph..:
Tseng, W. J.
;
van Dorp, D. H.
;
Lieten, R. R.
..
The Journal of Physical Chemistry C. 118 (2014) 51 - p. 29492-29498 , 2014
Link:
https://doi.org/10.1021/jp508314q
RT Journal T1 <Title>Anodic Etching of n-GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1021_jp508314q&Exemplar=1&LAN=DE A1 Tseng, W. J. A1 van Dorp, D. H. A1 Lieten, R. R. A1 Vereecken, P. M. A1 Borghs, G. PB American Chemical Society (ACS) YR 2014 SN 1932-7447 SN 1932-7455 JF The Journal of Physical Chemistry C VO 118 IS 51 SP 29492 OP 29498 LK http://dx.doi.org/https://doi.org/10.1021/jp508314q DO https://doi.org/10.1021/jp508314q SF ELIB - SuUB Bremen
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