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Residual stress analysis of 4H-SiC crystals obtained by a t..:
Yu, Yeong-Jae
;
Byeon, Dae-Seop
;
Shin, Yun-Ji
...
CrystEngComm. 19 (2017) 45 - p. 6731-6735 , 2017
Link:
https://doi.org/10.1039/c7ce01641g
RT Journal T1
Residual stress analysis of 4H-SiC crystals obtained by a top-seeded solution growth method
UL https://suche.suub.uni-bremen.de/peid=cr-10.1039_c7ce01641g&Exemplar=1&LAN=DE A1 Yu, Yeong-Jae A1 Byeon, Dae-Seop A1 Shin, Yun-Ji A1 Choi, Su-Hun A1 Lee, Myung-Hyun A1 Lee, Won-Jae A1 Jeong, Seong-Min PB Royal Society of Chemistry (RSC) YR 2017 SN 1466-8033 JF CrystEngComm VO 19 IS 45 SP 6731 OP 6735 LK http://dx.doi.org/https://doi.org/10.1039/c7ce01641g DO https://doi.org/10.1039/c7ce01641g SF ELIB - SuUB Bremen
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