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A systematic study of MOCVD reactor conditions and Ga memor..:
Chauhan, Prerna
;
Hasenöhrl, S.
;
Vančo, Ľ.
...
CrystEngComm. 22 (2020) 1 - p. 130-141 , 2020
Link:
https://doi.org/10.1039/c9ce01549c
RT Journal T1
A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation
UL https://suche.suub.uni-bremen.de/peid=cr-10.1039_c9ce01549c&Exemplar=1&LAN=DE A1 Chauhan, Prerna A1 Hasenöhrl, S. A1 Vančo, Ľ. A1 Šiffalovič, P. A1 Dobročka, E. A1 Machajdík, D. A1 Rosová, A. A1 Gucmann, F. A1 Kováč, J. A1 Maťko, I. A1 Kuball, M. A1 Kuzmík, J. PB Royal Society of Chemistry (RSC) YR 2020 SN 1466-8033 JF CrystEngComm VO 22 IS 1 SP 130 OP 141 LK http://dx.doi.org/https://doi.org/10.1039/c9ce01549c DO https://doi.org/10.1039/c9ce01549c SF ELIB - SuUB Bremen
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