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1 Ergebnisse
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An ab initio approach on the asymmetric stacking of GaAs 〈1..:
Yeu, In Won
;
Han, Gyuseung
;
Hwang, Cheol Seong
.
Nanoscale. 12 (2020) 34 - p. 17703-17714 , 2020
Link:
https://doi.org/10.1039/d0nr02010a
RT Journal T1
An ab initio approach on the asymmetric stacking of GaAs 〈111〉 nanowires grown by a vapor–solid method
UL https://suche.suub.uni-bremen.de/peid=cr-10.1039_d0nr02010a&Exemplar=1&LAN=DE A1 Yeu, In Won A1 Han, Gyuseung A1 Hwang, Cheol Seong A1 Choi, Jung-Hae PB Royal Society of Chemistry (RSC) YR 2020 SN 2040-3364 SN 2040-3372 JF Nanoscale VO 12 IS 34 SP 17703 OP 17714 LK http://dx.doi.org/https://doi.org/10.1039/d0nr02010a DO https://doi.org/10.1039/d0nr02010a SF ELIB - SuUB Bremen
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