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Influence of potential well thickness on the carrier transp..:
Dong, Hailiang
;
Jia, Zhigang
;
Jia, Wei
...
Physical Chemistry Chemical Physics. 24 (2022) 43 - p. 26708-26716 , 2022
Link:
https://doi.org/10.1039/d2cp03078k
RT Journal T1 <Title>Influence of potential well thickness on the carrier transport characteristics of InGaAs quantum dot laser diodes</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1039_d2cp03078k&Exemplar=1&LAN=DE A1 Dong, Hailiang A1 Jia, Zhigang A1 Jia, Wei A1 Liang, Jian A1 Wang, Zhiyong A1 Xua, Bingshe PB Royal Society of Chemistry (RSC) YR 2022 SN 1463-9076 SN 1463-9084 JF Physical Chemistry Chemical Physics VO 24 IS 43 SP 26708 OP 26716 LK http://dx.doi.org/https://doi.org/10.1039/d2cp03078k DO https://doi.org/10.1039/d2cp03078k SF ELIB - SuUB Bremen
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