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1 Ergebnisse
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Influence of indium tin oxide residues on the electrical pe..:
Yu, Xiang
;
Zhang, Zhiqiang
;
Pei, Jingxuan
..
Journal of Materials Chemistry C. 10 (2022) 48 - p. 18312-18325 , 2022
Link:
https://doi.org/10.1039/d2tc04397a
RT Journal T1 <Title>Influence of indium tin oxide residues on the electrical performance of hydrogenated amorphous silicon thin-film transistors in the backplane of active-matrix displays</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1039_d2tc04397a&Exemplar=1&LAN=DE A1 Yu, Xiang A1 Zhang, Zhiqiang A1 Pei, Jingxuan A1 Zhang, Jing A1 Boukherroub, Rabah PB Royal Society of Chemistry (RSC) YR 2022 SN 2050-7526 SN 2050-7534 JF Journal of Materials Chemistry C VO 10 IS 48 SP 18312 OP 18325 LK http://dx.doi.org/https://doi.org/10.1039/d2tc04397a DO https://doi.org/10.1039/d2tc04397a SF ELIB - SuUB Bremen
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