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Self-doped p–n junctions with high carrier concentration in..:
Deng, Dawei
;
Si, Rutong
;
Wen, Bo
...
Journal of Materials Chemistry A. 11 (2023) 41 - p. 22360-22370 , 2023
Link:
https://doi.org/10.1039/d3ta04322c
RT Journal T1 <Title>Self-doped p–n junctions with high carrier concentration in 2D GaN/MoSSe heterostructures: a first-principles study</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1039_d3ta04322c&Exemplar=1&LAN=DE A1 Deng, Dawei A1 Si, Rutong A1 Wen, Bo A1 Seriani, Nicola A1 Wei, Xiao-Lin A1 Yin, Wen-Jin A1 Gebauer, Ralph PB Royal Society of Chemistry (RSC) YR 2023 SN 2050-7488 SN 2050-7496 JF Journal of Materials Chemistry A VO 11 IS 41 SP 22360 OP 22370 LK http://dx.doi.org/https://doi.org/10.1039/d3ta04322c DO https://doi.org/10.1039/d3ta04322c SF ELIB - SuUB Bremen
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