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1 Ergebnisse
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High-quality SiNx thin-film growth at 300 °C using atomic l..:
Park, Jae Chan
;
Kim, Dae Hyun
;
Seok, Tae Jun
...
Journal of Materials Chemistry C. 11 (2023) 27 - p. 9107-9113 , 2023
Link:
https://doi.org/10.1039/d3tc00475a
RT Journal T1 <Title>High-quality SiNx thin-film growth at 300 °C using atomic layer deposition with hollow-cathode plasma</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1039_d3tc00475a&Exemplar=1&LAN=DE A1 Park, Jae Chan A1 Kim, Dae Hyun A1 Seok, Tae Jun A1 Kim, Dae Woong A1 Ahn, Ji-Hoon A1 Kim, Woo-Hee A1 Park, Tae Joo PB Royal Society of Chemistry (RSC) YR 2023 SN 2050-7526 SN 2050-7534 JF Journal of Materials Chemistry C VO 11 IS 27 SP 9107 OP 9113 LK http://dx.doi.org/https://doi.org/10.1039/d3tc00475a DO https://doi.org/10.1039/d3tc00475a SF ELIB - SuUB Bremen
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