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1 Ergebnisse
1
Atomic layer engineering on resistive switching in sub-4 nm..:
Ling, Chen-Hsiang
;
Mo, Chi-Lin
;
Chuang, Chun-Ho
..
Journal of Materials Chemistry C. 11 (2023) 33 - p. 11195-11203 , 2023
Link:
https://doi.org/10.1039/d3tc00542a
RT Journal T1
Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices
UL https://suche.suub.uni-bremen.de/peid=cr-10.1039_d3tc00542a&Exemplar=1&LAN=DE A1 Ling, Chen-Hsiang A1 Mo, Chi-Lin A1 Chuang, Chun-Ho A1 Shyue, Jing-Jong A1 Chen, Miin-Jang PB Royal Society of Chemistry (RSC) YR 2023 SN 2050-7526 SN 2050-7534 JF Journal of Materials Chemistry C VO 11 IS 33 SP 11195 OP 11203 LK http://dx.doi.org/https://doi.org/10.1039/d3tc00542a DO https://doi.org/10.1039/d3tc00542a SF ELIB - SuUB Bremen
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