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1 Ergebnisse
1
Development of S‐Band High Power Klystron:
Wang, Shengchang
;
Dong, Dong
;
Pei, Shilun
...
Chinese Journal of Electronics. 29 (2020) 4 - p. 772-778 , 2020
Link:
https://doi.org/10.1049/cje.2020.06.005
RT Journal T1 <Title>Development of S‐Band High Power Klystron</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1049_cje.2020.06.005&Exemplar=1&LAN=DE A1 Wang, Shengchang A1 Dong, Dong A1 Pei, Shilun A1 Zhou, Zusheng A1 Fukuda, Shigeki A1 Zheng, Kai PB Institute of Electrical and Electronics Engineers (IEEE) YR 2020 SN 1022-4653 SN 2075-5597 JF Chinese Journal of Electronics VO 29 IS 4 SP 772 OP 778 LK http://dx.doi.org/https://doi.org/10.1049/cje.2020.06.005 DO https://doi.org/10.1049/cje.2020.06.005 SF ELIB - SuUB Bremen
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