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1 Ergebnisse
1
200 μm APD OEIC in 0.35 μm BiCMOS:
Jukić, T.
;
Steindl, B.
;
Enne, R.
.
Electronics Letters. 52 (2016) 2 - p. 128-130 , 2016
Link:
https://doi.org/10.1049/el.2015.3540
RT Journal T1 <Title>200 μm APD OEIC in 0.35 μm BiCMOS</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1049_el.2015.3540&Exemplar=1&LAN=DE A1 Jukić, T. A1 Steindl, B. A1 Enne, R. A1 Zimmermann, H. PB Institution of Engineering and Technology (IET) YR 2016 SN 0013-5194 SN 1350-911X JF Electronics Letters VO 52 IS 2 SP 128 OP 130 LK http://dx.doi.org/https://doi.org/10.1049/el.2015.3540 DO https://doi.org/10.1049/el.2015.3540 SF ELIB - SuUB Bremen
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