I agree that this site is using cookies. You can find further informations
here
.
X
Login
Merkliste (
0
)
Home
About us
Home About us
Our history
Profile
Press & public relations
Friends
The library in figures
Exhibitions
Projects
Training, internships, careers
Films
Services & Information
Home Services & Information
Lending and interlibrary loans
Returns and renewals
Training and library tours
My Account
Library cards
New to the library?
Download Information
Opening hours
Learning spaces
PC, WLAN, copy, scan and print
Catalogs and collections
Home Catalogs and Collections
Rare books and manuscripts
Digital collections
Subject Areas
Our sites
Home Our sites
Central Library
Law Library (Juridicum)
BB Business and Economics (BB11)
BB Physics and Electrical Engineering
TB Engineering and Social Sciences
TB Economics and Nautical Sciences
TB Music
TB Art & Design
TB Bremerhaven
Contact the library
Home Contact the library
Staff Directory
Open access & publishing
Home Open access & publishing
Reference management: Citavi & RefWorks
Publishing documents
Open Access in Bremen
zur Desktop-Version
Toggle navigation
Merkliste
1 Ergebnisse
1
High‐power‐density InAlGaN/GaN HEMT using InGaN back barrie..:
Kotani, Junji
;
Makiyama, Kozo
;
Ohki, Toshihiro
...
Electronics Letters. 59 (2023) 4 - p. , 2023
Link:
https://doi.org/10.1049/ell2.12715
RT Journal T1
High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers
UL https://suche.suub.uni-bremen.de/peid=cr-10.1049_ell2.12715&Exemplar=1&LAN=DE A1 Kotani, Junji A1 Makiyama, Kozo A1 Ohki, Toshihiro A1 Ozaki, Shiro A1 Okamoto, Naoya A1 Minoura, Yuichi A1 Sato, Masaru A1 Nakamura, Norikazu A1 Miyamoto, Yasuyuki PB Institution of Engineering and Technology (IET) YR 2023 SN 0013-5194 SN 1350-911X JF Electronics Letters VO 59 IS 4 LK http://dx.doi.org/https://doi.org/10.1049/ell2.12715 DO https://doi.org/10.1049/ell2.12715 SF ELIB - SuUB Bremen
Export
RefWorks (nur Desktop-Version!)
Flow
(Zuerst in
Flow
einloggen, dann importieren)