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1 Ergebnisse
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Internal write‐back and read‐before‐write schemes to elimin..:
Pasandi, Ghasem
;
Pedram, Massoud
IET Circuits, Devices & Systems. 12 (2018) 4 - p. 460-466 , 2018
Link:
https://doi.org/10.1049/iet-cds.2017.0227
RT Journal T1
Internal write‐back and read‐before‐write schemes to eliminate the disturbance to the half‐selected cells in SRAMs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1049_iet-cds.2017.0227&Exemplar=1&LAN=DE A1 Pasandi, Ghasem A1 Pedram, Massoud PB Institution of Engineering and Technology (IET) YR 2018 SN 1751-858X SN 1751-8598 JF IET Circuits, Devices & Systems VO 12 IS 4 SP 460 OP 466 LK http://dx.doi.org/https://doi.org/10.1049/iet-cds.2017.0227 DO https://doi.org/10.1049/iet-cds.2017.0227 SF ELIB - SuUB Bremen
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